Structure of GaAs(001) (2x4)-c(2x8) Determined by Scanning Tunneling Microscopy
نویسنده
چکیده
The scanning tunneling microscope (STM) has been used to study the (2X4)-c(2&&8) reconstruction on the arsenic-rich surface of GaAs(001). The STM images show that the 4& periodicity is due to a regular array of missing arsenic dimers. The (2 X 4) units are arranged so as to give small domains of either (2X4) or c(2x 8) reconstructions. These images are the first high-resolution STM images obtained from a surface grown by molecular-beam epitaxy. Features are seen which may be important in the mechanism of growth.
منابع مشابه
Csri Summer Proceedings 2006
The atomic surface structure of compound semiconductors plays a large role in the growth of semiconductor films and the final microstructure of the film. During growth of InxGa1−xAs films, a mixed-termination surface consisting of a (4x3) reconstruction with common binary InAs or GaAs reconstructions, such as the α2(2x4), has been observed. We have used Density Functional Theory (DFT) to determ...
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